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| The impulse DC plasma sputtering method is used. The main theory is in the vacuum environment in which, the negative pole will be boosted to several hundred volts of voltage. In this way, the gas flowing through will be turned into plasma under the glow discharge effect of the high voltage. Further, the positive irons of the plasma are used to impact the surface of the metallic target to force out the atoms of the target by the energy transforming method, and then sputtered and remain on the Workpiece for carrying out the film settling process. |
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| Sputtering is a technology in which the material is released from the source at much lower temperature than evaporation. The substrate is placed in a vacuum chamber with the source material, named a target, and an inert gas (such as argon) is introduced at low pressure. A gas plasma is struck using an DC or RF power source, causing the gas to become ionized. The ions are accelerated towards the surface of the target, causing atoms of the source material to break off from the target in vapor form and condense on all surfaces including the substrate. As for evaporation, the basic principle of sputtering is the same for all sputtering technologies. |
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